In our most recent work, the zinc blende (γ) phase of copper iodide –which holds the record hole conductivity for intrinsic transparent p-type semiconductors– was studied using a high-throughput approach. Eight impurities suitable for n-type doping were discovered. Unfortunately, our work also reveals that donor doping is hindered by compensating native defects, making ambipolar doping unlikely.
This article is part of the themed collection: 2019 PCCP HOT Articles, and is free to download for couple of months. It was selected for the September Cover of PCCP !